Periodic Breakpoint Of Atomic Indium Wire Grown On Si(5512)-21Studied By Uhv-STM

Recently, more and more attention has been focused on the atomic-scale pro-duction of nanoscale devices, which is the hot spot of semiconductor in physics and modern industry. The way of heteroepitaxy growth, physical properties and quantum properties of atomic scale have been researched widely. Silicon (Si) is an important semiconductor material and has a significant advantage. In this study, Si (5512) has the longest interchain spacing (5.35nm) and one-dimensional symmetry, which is able to form a smooth surface reconstruction. Thus, Si (5512) can be the firstly choice template for nano-metal-wires growth.In this thesis, the surface of Si (5512) has been investigated by the ultra high vaccum scanning tunneling microscope (STM). The STM images of Si (5512) surface from room temperature to400℃have been analyzed. It is found that the absorp-tion properties of indium atoms vary with the temperature. There were absorbing, mixing, and replacing phenomena with different substrate temperature. The absorp-tion method, reason analysis and imaging principle have also been investigated. The absorption method in450℃and the reason of the breakpoint in indium atoms chain have been analyzed by the empty state and the filled stated STM images of the imaging principle. In addition, we has presented three kinds of models of the atomic structure based on the image of indium absorption for further calculation. Four different structural models have also been proposed.