| Due to the potential military and industrial application, High Power Microwave (HPM) technology has been developing rapidly in recent years. A large number of high-power microwave source devices have been produced in recent years. However, with the development of technology, high power microwave devices put forward higher requirements on the output power and the pulse width. Therefore, the solution of multipactor phenomenon, which is the main inducing factors of pulse shortening and dielectric window breakdown, is particularly important. Based on the above reasons, the thesis of multipactor effect about microwave source device and its characteristics were studied.Through the comprehensive analysis of complex field environment of electron as the microwave field injecting dielectric surface, the paper calculated the state of electronic movement and the characteristics of dielectric single-surface multipactor discharge by considering the combined effect of additional RF field and dielectric surface electrostatic field.By building the dynamic model of moving electrons on the media surface, the effects of state parameters, such as initial emission angle and initial phase, and DC field, RF field parameters on the electron trajectory, were analyzed. By adopting Vaughan’s multipactor empirical formula and Monte Carlo sampling distribution, the susceptibility region of multipactor discharge are obtained. Simulation results showed that the susceptibility region was more sensitive to the longitudinal RF field, and the transverse RF field played less important role in the multipactor effect. After introducing ID PIC (particle-in-cell) method in the simulation of multipactor effect, the parameters, such as the number of secondary electrons and space field, were calculated, and the relationship between physical variables was also considered. In addition, the suppression method of dielectric breakdown and multipactor were also summarized in the text. |
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