Study On Simulation And Experiment Of4H-SiC SBD With New Type Of Terminal Structure

4H-SiC SBD has already shown a great potential in power system, because oftheir fast switching speed and low-conduction loss.Based on the simulation analysis of the4H-SiC SBD with high k dielectric FieldPlate Termination, a4H-SiC SBD with semi-insulating polycrystalline silicon (SIPOS)FP termination has been fabricated. The current could reach to4A when the appliedvoltage is3.6V, corresponding to an on-resistance (Rsp-on) of5.87mΩ cm2. In reversesituation，the breakdown voltage could attend to1200V. It is also proved by theexperimental results that the FP termination would have a nice performance when thelength is larger than20μm. And then the measurement results of the breakdownvoltage after the second passivation show that polymide(PI) material increases thebreakdown voltage effectively.The4H-SiC SBD with JTE termination is designed. The simulation results showthat the single ion implantation has the same effect as the multiple ion implantations.Meanwhile, the single ion implantation has some advantages such as reducing theimplantation damage, decreasing the sensitivity of the breakdown voltage on implantconcentration and the implantation energy. Finally, the experiment plan of the4H-SiCJTE SBD is established.