Photoluminescence Characterization Of Erbium Ions Doped SiC And ZnO Thin Film

With the development of optical fiber communication and integrated optics technology, Er-doped waveguide amplifiers(EDWA) have attracted much attention because of their potential application in the field of integrated optoelectronics. The near-infrared luminescence of Er3+ ions occurs at a wavelength of 1.53μm, corresponding to the minimum losses of silicon optical fiber. The luminescence characteristic makes the extensive application of Er-doped material in the field of integrated optoelectronics.This paper begins with the study of erbium-doped SiC and ZnO. In the paper we mainly represent the study about the luminous properties of the erbium ions. The main research will be presented as follow:Firstly, Using different implantation ways, we injected a appropriate amount of erbium ions into the SiC. Then, we analyzed the fluorescence luminescence properties and the distribution of erbium ions in the substrate material. Secondly, we have utilized the magnetron sputtering method to preparing erbium-doped ZnO conductive thin film. Then, we analyzed the luminous properties of erbium ions at different temperatures and substrate materials. The main results are as follow:(1) Utilizing the ion implantation method, we implantation the Er ions into SiC crystal. The implantation energy is 280 KeV, and the implantation dose are 5×1013, 1×1014, 5×1014cm-2. Using the fluorescence spectrometer, find that there is a 1238nm sharp emission peak under low temperature about 12K.The phenomena due to the transition of erbium ion between 4S3/2 and 4I11/2. At the same time, we also found that there is a wide emission peak in the vicinity of 1100nm.We speculated that the injected erbium ions have damaged the crystal and caused a large number of crystal defects, which will induce the deep level emission process of SiC. And with the dose increasing, defects in SiC crystals also increased. Therefore, the defection at peak 1100nm increased, which agrees well with the experiment datas.(2) The erbium ytterbium Co-doped ZnO thin films were prepared by using magnetron sputtering system.The substrate temperature is controlled at 600℃, and the sputtering time is 7h, the material of substrates are SiO2、gO and Al2O3. The results showed that there is a fluorescence emission peak of Er doped ZnO thin film around 1.53μm at room temperature. The fluorescence emission intensity of thin films prepared on the MgO is the highest one in the experiment. This may because that ZnO and MgO have a smaller lattice mismatch. Then the size of grain crystal in these films is big and the degree of crystallinity is good too. the crystal growth on MgO substrate has the less lattice defects, the probability of energy transfer between erbium ions and lattice defects is reduce.And the luminescence properties of ZnO thin film doped byEr3+in MgO substrate have good performance. At the same time, from the photoluminescence chart of deposition of thin film.(3) We used Si as the substrates, and the sputtering time is about 7h. The ZnO thin films are prepared at different temperatures by using magnetron sputtering apparatus. The temperature of the substrates are controlled at 200℃,400℃ and 600℃. using X-ray diffraction found that the grain size grow, the space between grains reduce and the quality of the grain improve with increasing the temperature, the lattice defects In the crystal is gradually reduce, the luminous efficiency of erbium ions is gradually increased,The intensity of fluorescence emission is gradually increased with the quality of the thin films increasing.(4) We used Si and SiO2 as the substrates, and the sputtering time is about 1h. substrate temperature choose 700 and 800℃, we found a quite wide emission peak near 1650 nm, this related to deep level emission of ZnO, because of the magnetron sputtering substrate temperature is too high, with recent move to clearance increases the probability of the atom, the defects of zinc filler, caused the deep level emission of ZnO.At the same time, near the 1530nm appeared strong absorption peak, this basically is of flaw thin film growth, erbium ions will absorb the energy transfer to the lattice defects, promoted the deep-level emission of crystal, and reduced the fluorescence emission of erbium.