Investigation On Properties And Applications By Tunneling Coupling Coherence In Semiconductor Quantum Well Structure

The materials of the semiconductor quantum well have been applied in the field ofquantum optics widely because the production of the semiconductor quantum well hasbeen mature. It has attracted the attention of the researchers in recent years forapplications based on Electromagnetically Induced Transparency in intersubband orinterband transitions of semiconductor quantum well. Scientists have observed thechanges of the polarization, absorption and dispersion of the media by the interactionbetween the light and them.In this paper, we focus on the researches different phenomenon and applications ofTIT (tunneling induced transparency) between intersubband transitions in thesemiconductor quantum-well structures. It includes four parts.Firstly, we introduce development and theoretical knowledge for the structure ofthe semiconductor quantum well and describe mainly physical essence of TIT(tunneling induced transparency).Secondly, two kinds of asymmetric coupled semiconductor quantum-well structuresare designed and parameters of this semiconductor quantum-well have been obtained,such as energy levels, wave-function and transition matrix elements. We investigatethe property of dispersion in this structure due to TIT mechanism. We discuss thecentral wavelength of the two quantum-well structures and found the structure withInGaAs/AlAsis more suitable for the application of the optical switch.Then we describes a proof-of-principle study in semiconductor coupled quantumwell structure that can be exploited to devise an efficient new mechanism for opticalswitch. We chose materials of InGaAs/AlAsto realize optical switch at thecommunication wavelength in range from1.55umto2.0umbased on TIT betweenintersubband transistions. In the last we chose four-level system using asymmetric coupled doublesemiconductor quantum well structure for the electron localization. We discuss theone-and two-dimensional spatial distributions of the weak probe absorption spectrumby solving density matrix equations under conditions that the probe field is weak andorthogonal to the driving fields with forms of the standing-waves.