Preparation And Properties Of Gallium Nitride Nanomaterials

Gallium nitride is an important wide-bandgap III-V semiconducting material. TheGaN nanostructure has drawn widespread research recently due to its potential applicationin electronic and optoelectronic devices. In this paper, Au nanoparticles and Fe-Cr mixturewere used as catalysts to control the synthesis of GaN nanomaterials by catalytic chemicalvapor deposition (CCVD). The samples were characterized by FE-SEM, TEM, HRTEM,SAED, XRD, Raman spectroscopy and photoluminescence (PL). The details and resultsare summarized as follows:The Au nanoparticles were used as catalyst to conduct the GaN nanomaterials andthe influence of gallium sources and ammonia flow rate on the growth of products wasalso investigated. SEM results indicated that abundant of GaN nanowires with uniformdiameter were successfully fabricated using metal gallium as the gallium source withreaction temperature of900℃and ammonia flow rate of150mL/min. In addition, PLspectrum test showed these nanowires possessed good photoluminescence properties.The Fe-Cr mixtures were used as catalyst to conduct the GaN nanomaterials and theinfluence of gallium sources, reaction temperature and ammonia flow rate on the growthof products was also demonstrated. SEM results indicated that a large number of highquality GaN nanowires with uniform diameter of30nm were successfully fabricatedusing metal gallium as the gallium source with reaction temperature of900℃andammonia flow rate of150mL/min. Changing the ammonia flow rate to200mL/min,single-crystal GaN nanowires with cubic zinc-blende structures were preparedsuccessfully. HRTEM, SAED and PL spectrum were used to further characterized thecrystalline structure of cubic GaN, results revealed that these GaN nanowires were cubiczinc-blende structure with good photoluminescence properties.