Preparation And Photoelectric Properties Study Of Carbon-encapsulated CdSe Hybrid Nanobelts

In this thesis, CdSe/C hybrid nano structure was synthetized by a combustionmethod followed by a selenylation process with triethanolamine being a complexant,active agent and organic fuel. The synthetized hybrid nanobelt sample whose surfaceis smooth and neat, is of belt-like, one-dimension structure. CdSe quantum dots areevenly inlaid on carbon methane, hybridized with C to form a hybrid structure.Single CdSe/C hybrid nanobelt was used to fabricate FET devices, electricalproperty tests of which showed that the CdSe/C hybrid nanobelt whose major carriesare holes and the carrier mobility reaches as high as1.412*104cm2V1S1, displaysp-type conduction. Tests have demonstrated that the CdSe/C hybrid nanobelt emittsred light, in whose PL spectrum the Raman scattering peak intensity related withCdSe band edge illumination increases first, then slums down as the excitationintensity increases, in addition,the position of excitation peak redshifts gradually andasymmetrically extends in high-energy part to form a Fano-shape. Long-distanceCoulomb attraction couples the excitons and plasmas, forming hybrid excitons, i.e.F rster resonance energy transfer, while continuum and discrete excited coupling willlead to the formation of nonlinear Fano effect.In photo-electric tests, the spectrum response of photovoltaic detectors based onCdSe/C hybrid nanobelts covers the whole range of visible light, and multi-carrierseffect comes to appear. Moreover, photovoltaic detectors response to incident lightswiftly and recovers quickly, and the time of response and recovery is not influencedby the wavelength of incident light, showing a stable photovoltaic sensibility.Furthermore, whether positive or negative of photo-conductivity of CdSe/C hybridnanobelt can be controlled by adjusting the added bias.Piezoresistance experiments showed that, single CdSe/C hybrid nanobelt’sresistance increases and decreases, under compressive strain and tensile strain,respectively. CdSe/C hybrid nanobelt piezoresistance devices are very sensitive tostrain variations, even slight variation in strain will be remarkably embodied inelectric signals, and they have excellent piezoresistance replicability and stability under different strain.