| Resistance random memory(RRAM) has become the research focus of the nextgeneration non-volatile memory due to its advantages such as simple structure,low-power consumption, high storage density and the excellent compatibility withtraditional CMOS technology. Carbon nanotube has attracted extensive spotlightsince its discovery. In this thesis, the piezoresistance effect of carbon nano-materialswere studied, in order to develop a brand-new non-volatile strain storage device.P-type bamboo-like carbon nanotubes (BCNTs) and hierarchically structuredcarbon nanofibers (HsCNFs) were synthesized by means of the optimized chemicalvapor deposition with the given catalysts and carbon sources. The morphology andstructure analysis of the products showed that BCNTs were prepared through the basegrowth mechanism, while HsCNFs were formed through the branch growthmechanism.Single one-dimensional nano-structured material devices were fabricated, andthe piezoresistance performance was studied under both static and dynamiccompression and tensile strain. The static strain test results showed that the resistanceof both materials laggardly decreased with the increase of compression strain, whilesharply increased with the increase of tensile strain. The dynamic strain test resultsshowed that the deformation factor of BCNTs under compression strain and tensilestrain were42.3and103.2, respectively, while those of HsCNFs were58.2and3113.6, respectively.The strain storage properties were studied using a reasonable deformationquantity, strain cycle time of40s and triangular wave voltage with the frequency of0.005Hz. The test results showed that both kinds of carbon nano-materials had betternon-volatile strain storage properties under tensile strain than under compressionstrain. The study of non-volatile strain storage device based on carbon nano-materialsplays an important role in the theoretical direction of the next generation non-volatilestorage device. |
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