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Preparation And Characterization Of InP And In2O3Nanomaterials

Posted on:2015-05-01Degree:MasterType:Thesis
Country:ChinaCandidate:L ChenFull Text:PDF
GTID:2181330434459309Subject:Materials engineering
Abstract/Summary:PDF Full Text Request
Because of its superior performance of Indium-based semiconductor materials, it has a wide range of applications in many fields. So their studies on preparation, and performance get a great deal of attention and interest. In this paper, we prepared InP and In2O3nano-structured materials using solvothermal synthesis, and researched phase, morphology, formation mechanism and optical properties of the product. Full text aimed to control the synthesis and characterization of indium-based semiconductor materials, explore the growth process mechanism, obtain the best experimental conditions. The main results are as follows:1. The preparation and properties of InP nanospheresInP nanospheres were obtained mildly by solvothermal method using InCl3ยท4H2O and P4as main raw materials, NaBH4as a reducing agent. The effects of reaction temperatures and times on the product were investigated, and the perfect preparation parameters were obtained. On this basis, the formation mechanism of InP nanospheres were conducted a preliminary study from chemical reactions and kinetics aspects, we conclude that diffusion, nucleation mainly control this reaction. In addition, the optical property results of InP nanospheres showed that its photoluminescence emerged blue shift, which was caused by nanomaterials size effects and interface effects.2. The preparation and properties of In2O3nanorodsIn2O3nanorods were prepared using In(NO3)34H2O and urea as reactants, diethylene glycol and deionized water as mixed solution, by solvothermal method, their morphology and crystal structure were observed by XRD, SEM and TEM. By investigating the effects of reaction times, reaction temperatures, indium source and organic solvent on the product, we got the best preparation conditions. And the blue shift reason of In2O3nanorods PL peak, caused by the annealing, was discussed.3. The preparation and properties of Zn-doped In2O3NanostructuresWe successfully prepared Zn-doped In2O3nanorods, hexagonal prism and spindle nanostuctures using Zn(CH3COO)22H2O and In(NO3)34H2O as reactants, by solvothermal method. Photocatalytic efficiency of Zn-doped In2O3nanorods was studied and the results showed that Zn could improved the catalytic activity of In2O3nanorods. Also the impacts of the reaction times, proportion of organic solvents and aqueous solutions on In2O3nanomaterials morphplogy and structure, were discussed. And the reason why hexagonal prism and Spindle In2O3nanostuctures appeared photoluminescence emission peak was studied.
Keywords/Search Tags:Solvothermal, InP, In2O3, Reaction mechanism, Opticalproperties
PDF Full Text Request
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