Preparation And Charaterization Of ZnO Low-Dimensional Nano-Materials

ZnO material is a wide band gap (energy gap is3.37eV) and high exciton binding energy(60meV) semiconductor material. Because of its excellent properties, such as piezoelectric element, photoelectricity and sensitivity for special environment and chemical substances, the material has been widely used in the optical devices, transducers and field emission manufaction fields This topic mainly studies the preparation methods and properties of the ZnO low-dimensional nano-material including the preparation of ITO films and nanorods, as well as on the basis of the traditional of ZnO low-dimensional nano-wires, by adding ultrasound to form a standing wave, in order to make the nucleation growth in the wave section by controlling the location of the section of the standing wave. The detailed contents are as follows:(1) ZnO films were prepared by using electrochemical deposition method and characterized by XRD, AFM, UV-Vis. The results showed that the ZnO thin films can be prepared by electrochemical deposition method successfully.We found the ZnO films that prepared by electrochemical deposition had good photoelectric properties and flat morphologies with XRD patterns and AFM photographs. The optimal conditions for preparing the ZnO thin films were as following:the deposition temperature is80℃, the deposition time was6min, the annealing temperature was500℃, the concentration of zinc nitrate was0.05mol/l. The average optical transmittance of the ZnO films in the visible range was86.4%.(2) ZnO nanorods were prepared by using electrochemical deposition method and characterized by XRD and FESEM. The results showed that the ZnO nanorods can be prepared successfully by the electrochemical deposition method. The direction of ZnO nanorods were grown along the+C axis and the ZnO nanorods that prepared by electrochemical deposition had highly ordered orientation properties and crystallinity.The optimal conditions for preparing the ZnO nanorods were as following:the seed crystal time was40s, the deposition time was1Omin, the concentration of zinc nitrate was0.005mol/l, the concentration of CTAB was0.005mol/l, the concentration of HMT was0.01mol/l,the deposition potential was-0.90V and the annealing temperature and annealing time were450℃and2h respectively(3) Ultrasonic grating effect could be observed and ultrasonic standing wave field could be verified with ultrasonic grating.Ultrasonic propagation speed in liquid could be measured by using ultrasonic sound velocity meter and it could offer parameter for the basis of theoretical calculation of the preparation of ZnO lines. The ZnO line was successfully deposited on the glass substrate by using ultrasonic standing wave deposition and prove it is feasible to form ZnO lines with ultrasonic standing wave field.