Electrodeposition And Propertie Characterization Of One-Dimensional Nanostructured SnO₂

SnO2is an n-typed semiconductor with wide band gap which can be widely used in solar cells, gas sensing materials and other fields because of its attractive characteristics such as high transparency to visible light, ultraviolet absorption coefficient, low resistivity, environment-friendly and acid and alkali resistantability at room temperature. However, the produced SnO2films mainly composed of spherical particles, which is not conducive to electronic conduction. In contrast, One-dimensional structure SnO2provided a direct electrical pathways and a large specific surface area, which has improved its optical property and sensitivity. Therefore, preparing SnO2nanorods by a simple method is more concerned.This experiment mainly focused on electrodeposition of SnO2one-dimensional structures by adding different types of surface active agents. The results showed that SnO2nanorods prepared by various surfactants are in different crystal orientations, and CTAB is the best one for prepare SnO2nanorods. In the system of CTAB, the vertical and lateral grown SnO2 nanorods have been prepared on ITO-coated glass substrates by potentiostatic and pulsed potential electrodeposition, the two kinds of nanorods grow along the (110) and (101) crystal orientation respectively. Different density and aspect ratio of the SnO2nanorods were got by adjusting the electrochemical parameters.The effects of aspect ratio, density and grain orientation of SnO2nanorods on gas sensing and optical properties were studied. The results showed that the gas-sensing and optical properties are substantially proportional with density and aspect ratio. In the gas sensing properties, the highest sensitivity of prepared SnO2nanorods was32.5, which is as five times as SnO2thin films. The shortest response and recovery time is10s and14s respectively, which is less than the SnO2thin films. In terms of optical properties, SnO2nanorods band gap increased to3.83-3.95eV, and the light transmission rate is more than80%. The minimum resistivity is6.213·10-2Ω·cm, while the maximum carrier concentration is3.412·1018cm-3, which is better than the SnO2thin films (1.431·10-1Ω·cm,2.312·1018cm-3) significantly. In all, the gas sensing properties and electroptical properties of SnO2one-dimensional structure is much better than that of the SnO2bulk material.