Study On The Application Of The Cu₃N Film In Optical Storage

Cu3N has a structure of cubic anti-ReO3, in which the copper atoms occupy the center of thecubic edges and the nitrogen atoms occupy the corners of the cell. It is known that Cu3N is stable atroomtemperature but starts to decompose into Cu and N2above360℃. With the low decompositiontemperature, high resistivity and reflectance of infrared and visible band, Cu3N has been attractingconsiderable attention as a new material applicable in optical storage and microelectronics. Theradiation-induced decomposition of Cu3N opens its possibility usage in write-once optical storagedevice with a strong reflectivity contrast.In this paper，the write-once optical storage devices based on Cu3N film is mainly divided intosubstrate,record layer, absorbed layer and protective layer.Cu3N films were deposited onto glasses substrate using a pure Cu target and N2reaction gas byreactive DC magnetron sputtering.The irradiation experiments of Cu3N films were performed using a Surelite laser system thatwas operated at a wavelength of800nm, with the laser power of160mW, the laser pulse durationof5-6ns and the repetition rate of10Hz.Use the FV1000-IX81Confocal Microscope FromOlympus to read the information.The morphological and microstructural evolutions of Cu3N films have been characterized priorto and after irradiation in air with laser beam irradiation by X-ray diffraction(XRD), scanningelectron microscopy(SEM) and energy dispersive spectrometer (EDS). All of the above analysesshow that the Cu3N has been decomposed to Cu and N2in the irradiated parts of the film and theinformation have already been record in copper nitride film successfully.