The Impedance Properties Of Bi_0.5(Na_0.5K_0.5)_0.5Ti_0.75Zr_0.03O₃and GaN/Ga₂O₃with Different Humidity Conditions

In the last decade, environment humidity has gained considerable attention dueto its widespread influence in industrial, agricultural, meteorology, medicine andaeronautics, and the physics and chemistry properties of materials are greatlyinfluenced by environment humidity. The study of impedance properties withdifferent humidity conditions can offer useful guidelines for fabricating the highperformance function devices. In our work, based on the doping method, theimpedance properties of Bi0.5(Na0.85K0.15)0.5Ti0.97Zr0.03O3(BNKTZ) and GaN/Ga2O3compounds are studied with different humidity conditions. The two aspects of ourstudy as follows:(1) Our work is study the impedance properties of ABO3-type complex metaloxide materials with different humidity conditions. A site doped with alkaline elementand B site doped with Zr element Bi0.5(Na0.85K0.15)0.5Ti0.97Zr0.03O3(BNKTZ) powderwas prepared by metal-organic decomposition method. The main results aresummarized as follows: First, high sensitivity and low impedance of BNKTZhumidity sensor can be explained by the effect of A and B sites co-doped. Second, thecorresponding impedance change of BNKTZ sensor is more than four orders ofmagnitude within the range of11%-95%RH at100Hz. The response time andrecovery time are about18s and60s, and the maximum hysteresis is4%RH at100Hz. The BNKTZ powder, which is a kind of ferroelectric materials, is greatly affectedby humidity condition.(2) In order to study the impedance properties of Ga compounds with differenthumidity conditions, the GaN/Ga2O3compounds with different alkaline elementdoping are synthesized via thermal annealing method. Via comparing the impedancechange of samples with and without alkaline earth element doped at differenthumidity conditions, the sample, which is affected greatly by humidity, have beenfound and the impedance properties of it have been investigated. The main results aresummarized as follows: First, the formation of Ga2O3nanorod is not concerned withNa+ions doped, it is concerned with K+ions doped. However, the corrosion of GaNfrom alkaline element chemicals destroys will be promoted by Na+ions doped..Second, the corresponding impedance change of K+and Na+ions co-doped samplesensor is almost four orders of magnitude within the range of11%-95%RH at100Hz. The response time and recovery time are about6s and21s, and the maximumhysteresis is3%RH at100Hz. The impedance of Ga2O3nanorod is obviouslyaffected by humidity change.