Research On The Structure Of Group Ⅲ-ⅤSemiconductor Nanowires Device For High Integration Microsystems

The research work is mainly supported by the grants from National Basic Research Program of China (Grant No.2010CB327600), the Major International (Regional) Joint Research Program of China (Grant No.6102010600), the National Natural Science Foundation of China (Grant No.61077049), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No.20120005110011) and the Programme of Introducing Talents of Discipline to Universities (111Program) of China (Grant No.B07005).Ⅲ-Ⅴ semiconductor nanowires which has unique physical characteristics widely used in the next generation of electronic and optoelectronic devices which constitute a highly integrated micro-systems. So be prepared to explore the theory of nanowire growth model, morphology control has its important necessity. Meanwhile, as the core of the nanowire optoelectronic devices, the reliable method for preparing nanowire pn junction is to achieve high integration, high performance, multi-functional complex optoelectronic devices foundation. In summary, this study will mainly focus on the growth mechanism of nanowires, the electrical properties of GaAs nanowire morphology control and expand the pn junction of theoretical and experimental studies, the main results are as follows:1. Introduction nanowires grown theoretical models and related equipment, and comparative analysis them.2. Using the diffusion model to establish a theoretical model nanowire growth and analyz lateral growth and no lateral growth model. In case no lateral growth, we got the relationship between nanowire growth rate and axial diffusion length, radius and other parameters of the nanowire. More common, there is the presence of lateral growth of nanowires. At this point the growth of atomic mainly rely on the the substrate diffusion, side diffusion and the top sorption, these are the three important factors that influence the nanowire morphology, morphology of the curve is consistent with the experimental results obtained from model.3. DEZn and SiH4were used as p-type and n-type doped source. Using the method of metal organic chemical vapor deposition (MOCVD), GaAs nanowires axial pn junction arrays Successfully grown on GaAs (111)B substrates, pn junction has a good appearance and high crystal quality.4. Measuring the electrical properties of GaAs nanowire axial pn junction arrays, includes the following steps:coating, spin coating, pre-curing, stripping and plating electrode. Ⅰ-Ⅴ test results show that GaAs nanowire axial pn junction arrays has a clear rectification characteristic, the turn-on voltage is0.5V.