Experimental Study Of Method For Reactive Sputtering Film Deposition Based On Optical Emission Spectrum Of Plasma

With the development of modern industry, more and more sorts of function film are used in various fields; Magnetron sputtering film deposition technology not only has low deposition temperature, good film adhesion, good uniformity, high density and little impurity, film thickness can control, simple operation etc, and can be prepared conductive material, semiconductor materials and insulation film, so it has been widely used in recent years. In order to optimize the method of sputtering film coating and provide the experimental evidence for automation coating, this paper stuied the method of reactive sputtering coating.In this paper, the DC magnetron sputtering system and spectroscopic monitoring system is the experimental platform. With reaction sputtering preparing zinc oxide as an example, through on-line monitoring sputtering plasma emission spectrum of dc reactive sputtering process, the regular pattern of discharging plasma emission spectrum intensity is analyzed in the change of target power, the pressure of working, working gas flow and response gas flow. The influence of target power, the pressure of working, working gas flow and reactive gas flow to sputtering rate and sputtering state of the target is studied in the process of preparing oxide films through DC reactive sputtering coating. It is result that the target sputtering rate is the highest when working pressure is5Pa and working gas flow is10SCCM. The influence of reactive gas flow to the target sputtering state is studied when working pressure is5Pa and working gas flow is10SCCM. Reaction hysteresis curve of ZnO is gained, and it showed that the sputtering rate is rapid down when the reactive gas flow is1.5sccm.Different stages of reactive hysteresis curve films is prepared by monitoring of spectrum monitoring system and controlling of target power monitoring. The film crystalline structure and face morphology is characterized respectively. The results show that, with the increasing of the reactive gas flow, the film composition gradually transit from the metal zinc membrane to ZnO films. The film crystallite dimension is the largest and uniform when the oxygen flow rate is1.6SCCM, and zinc oxide film crystallization quality is optimal. The film electric conduction, light-admitting quality and wettability is detected respectively, The results show that, there are more zinc atoms in the film, so the conductivity of the film is good, close to the metal conductivity of zinc, light transmittance in below80%. By the grain size and film stress change effects the water contact Angle of the films are changed between45.9°to105.25°; With the reactive gas flow rate increasing further, in the transition stage and sputtering compounds stage, the conductivity of the films is weakened gradually. With the influence of film thickness and structure Film light-admitting quality is strengthened gradually, it is reach up to90%and even more In visible range. The film wettability is hydrophobic gradually, and reach up to109.87°when oxygen flow rate is1.4SCCM. By the above conclusions can be seen that the process parameters of sputtering can be optimized by the spectrum method and obtained the best target sputtering state under the same power. Anticipative composition and properties films can be prepared in the different preparation stage of the experimental hysteresis curve.