Thin Film Capacitors Based On High Performance Ferroelectric P(VDF-TrFE) Copolymer And Terpolymer

Because of their excellent ferroelectric properties, the P(VDF-TrFE) copolymer and the relaxor ferroelectrics terpolymer based on the polyvinylidene fluoride(PVDF) polymer has received so many attention and lager efforts have been made a deep research, has become the most popular and widely studied ferroelectric materials today. Combined the high dielectric properties of ferroelectric materials and the feasibility of processing into thin (micron) and ultra-thin (nanometers) film for organic polymer materials, they show great prospects to make the thin film capacitors for energy storage as well as memory devices.With modifications by introducing defects, the normal ferroelectrics can be converted into the relaxor ferroelectrics, which can effectively reduce the lager coercive field in the original ferroelectric materials, and also can greatly improve the releasable energy density. Ferroelectric polymers have two stable polarization states at zero bias, therefore they have applications in ferroelectric random access memory (FeRAM). In addition to the storage information of the traditional RAM devices, the FeRAM thin films have the nonvolatile characteristics. They also can effectively reduce the size and power consumption which would promote the further integration of the electronic devices. However, FeRAM has two major failure mechanisms, i.e.,"fatigue" and "imprint" effect. In this paper, we have intensively studied the "imprint" effect. We find that with the introduction of the appropriate electroactive polymer as an internal layer between the electrode and the ferroelectric polymer, not only the failure factors can be eliminated, but also ultimately make the "imprint" effect minimized. And the switching speed of the device is also improved, provides the possibility to realize rapid storage technology. The performance of silver electrode which used inkjet printing technology as also studied and compared with the titanium electrode which used traditional vacuum evaporation method.