Magnetron Sputtering Of Al <sub> 2 </ Sub> The O <sub> 3 </ Sub> Buffer Layer Zno Thin Films And Its Performance

ZnO film has been the hot topic in the research field of semiconductor material and photoelectric material in recent years. The raw material is inexpensive, non-toxic and rich reserve. As a kind of new material, the study of ZnO is an advanced topic.Preparation of ZnO thin films by magnetron sputtering method on different substrates will generate different stresses because of the differences in lattice mismatch between ZnO thin film and substrates, which will affect properties of films. However, the proper application of Transition Layer can relieve the stress resulted from mismatch between lattices. High quality ZnO films Preparation are the research emphasis and focus, and to achieve heteroepitaxy of ZnO films with Si are of obvious cost advantage and of compatibility with microelectronics.This thesis creatively utilized buffer layer to improve the micro-structure and properties of the films. The thesis mainly discusses the effect of Si substrate Al₂O₃ transition layer on ZnO film. It achieves the following conclusion through a contrastive analysis1. By XRD test analysis, ZnO thin films will deposited under different parameters shows a highly preferred oriented (002) plane, which iswas decided by the nature that (002) plane has the lowest surface free energy.2. By AFM test analysis, the surface roughness of ZnO film will decrease and the crystal grain size will largen by introducing Transition Layer properly because Transition Layer can reduce the lattice mismatch between ZnO film and substrate and residuAl stress in film.3. HALL effect test shows that carrier concentration of ZnO film increases,resistivity decreases, electron mobility increases, and conductive type in N by introducing Transition Layer properly...