High-energy Protons In Silicon Transport Monte Carlo Simulation

This paper deals with the Monte Carlo Simulation of high-energy protons Transport in Silicon,in which the intra-nuclear cascade model is used to deal with proton nuclear reaction process. And the results of radiation effects of proton in Silicon and p-SEU (proton induced Single Event Upset) cross section of some electronic devices are presented.The incident high-energy protons interact with the Silicon material in the way that is approximate to the three unrelated mechanisms:nuclear scattering,electronic process and nuclear reaction. The energy loss of protons or Silicon nuclei due to nuclear scattering is calculated using binary collision approximation and the "magic" formula is used to calculate the scattering angle. The electronic energy loss is calculated by Bethe-Bloch formulation at high energy,by Linhard-Scharff formulation at low energy and the interpolation formulation is used for the medium energy region. The nuclear reaction is calculated using intra-nuclear cascade model. The recoil atoms with high energy and the residual nuclear are dealt with in a strict way.A new model for calculating p-SEU cross section from heavy ion data with no adjusting the parameter of WEIBULL function that calculates heavy ion device cross section is presented. And based on the intra-nuclear cascade model,the p-SEU cross sections of some devices are calculated.After comparison with the result published and experimental data,it showed that it is a very good choice using intra-nuclear cascade model to simulate protons' nuclear reaction. And the result of protons transport is just fitted with the one calculated by LAHET;The p-SEU cross sections calculated are in good agreement with the experimental data.