Electron Beam Evaporation Of Aluminum Doped Zinc Oxide Transparent Conductive Film

As the Conventional energy source is getting dried up day by day to develop and use the new pure renewable energy already become various countries' the research hot spot. The solar energy is one kind of pure renewable energy has a lot of characteristic such as clean doesn't have the pollution and so on, thus solar energy has great application value.Solar cell which changes the energy of light into electrical energy directly is one of the most popular methods to use solar energy. And the crystalline silicon thin-film solar cell as a present of the second-generation solar cells has a very broad application prospect. The transparent conductive oxide is widely used as electrode material in the crystalline silicon thin-film solar cell. There are several transparent conductive oxides that are commonly used such as: ITO; SnO₂:F;ZnO:Al and so on. Among all of them ZnO:Al (also called AZO) has many advantages as non-toxic, does not have pollution, and low cost. So it is regarded as the ideal electrode material for crystalline silicon thin-film solar cell.Revolving our experimental group's research topic: the research on the polycrystalline silicon thin-film solar cell, in this article ZnO:Al films (AZO) were prepared on glass by using electron beam evaporation. And we analyzed the properties of the films changes with the doping quantity; the substrate temperature and so on. And we also made the rear electrode of the cell with both magnetic sputtering and electron beam evaporation. We investigated the properties of the films such as surface topography; crystallization; electrical property; optical property and the contact of the rear electrode/N-Si:H with scanning electron microscopy; X-ray diffraction spectrophotometer; standard four-probe meter; UV-Vis-NIR spectrophotometer; I-V characteristic tester.The results shows that:(l)The films made at 200℃with the 2.5%w/w doped with Al₂O₃ have a very low resistivity as 5×10^-3Ωcm . And the average of the transmissivity in the visible area is 85%.(2)The AZO made on the N-Si:H films by electron beam evaporation have a lower contact resistance and a higher composite reflectivity in the visible area compare with that made by magnetic sputtering. And do not hurt the N-Si:H films.