Numerical Analysis Of The Thermal Effect Of Long-pulse Laser And Semiconductor Materials

In this paper, long - pulsed laser on semiconductor materials thermal damage process of numerical calculation, Semiconductor materials received after the transient melting temperature and melt threshold value results.Study of the mesh size and the time step parameters and Finite Element Analysis of stability, the establishment of an optimized finite element model, Axisymmetric finite element model, using backward difference method transient temperature field.According to the classical equation of heat conduction to the basic principles Assuming that semiconductor materials and isotropic thermal parameters of the melting of the constants on the basis of Numerical Calculation of the long - pulsed laser irradiation of silicon and germanium the transient temperature field, to be silicon and germanium materials melt threshold. Then the incident laser beam radius than the thermal diffusion length conditions, The long - pulsed laser irradiation of silicon and germanium transient temperature field.Enthalpy method is used to resolve the process of solid-liquid phase change.. Simulation of a pulse width of 1 ms long-pulse laser with a semiconductor material Si and Ge of the thermal process, to a different energy laser irradiation of the target model, Target center of the front surface temperature history and the direction of the incident laser on the target temperature distribution, and the different energy laser irradiation of the target before and after the surface temperature distribution.It also pairs of silicon and germanium surface before and after the distribution of temperature along the direction of the incident laser temperature distribution, and the Target Center history and the temperature threshold of contrast, analysis of the silicon and germanium threshold of a different order of magnitude difference of reasons, Target Center and the temperature changes in the history of a differentcomparison and analysis of the reason.Consequently this work can provide the research method and theory for theinvestigations on the heating effects for semiconductor material.