Two-electron Shell Tunnel Transistor Thz Detectors

There are many shortcomings in the existing THz detectors: bulky, complex, difficulty with operation and so on. In particular, the miniaturization, integration as well as the imaging survey will be especially difficult. Furthermore, If the thermal noise outside surpasses the THz signal, the survey will be a quite difficult duty. In order to overcome these shortcomings, a kind of THz detector based on the double-electron layer tunneling transistor (DELTT) including an antenna was used in this paper. The antenna was used to efficiently couple THz radiation into the device for processing; developing an equivalent circuit model is extremely helpful in matching the antenna to the device.An equivalent circuit model for this GaAs based double-electron layer tunneling transistor (DELTT) integrated with an antenna is presented in this paper. The introduction of the product mechanism of THz wave, the present research situation of THz detectors and its applications are included too. We also analyze the principal characteristic of 2-Dimensional electron gas (2-DEG) and the optical quality of quantum well; study the transition process of the electron in quantum well, and on this base advance a new survey method.In this paper, we first calculate the current of the antenna, and obtain an curve of current to the power of THz radiation (I-P curve), then, the cross of the detector is divided into three regions, using transmission line theory, we establish a group of equations, the current and voltage can be solved by applying the appropriate boundary conditions. Therefore the impedance will be obtained.