Study On The Applications Of ZnO:Cd Nanorods Synthesized By Hydrothermal

ZnO is a kind of important new metal oxide semiconductor material, because of its unique piezoelectric, optoelectronic properties and high charge mobility, especially one dimensional ZnO nanostructures such as nanowires, nanorods and nanofiber, has a large specific surface area and unique physical and chemical properties, and the remarkable feature value potential in nano electronic devices, which is widely used in ultra sensitive sensors, UV / blue light emitting devices,micro structure of the sensor, field emission device and so on. In recent years, many experts and scholars, doping other elements to improve the luminescent properties and gas sensing properties of ZnO, which is very important for the luminescence and gas sensing properties of ZnO.In this paper, six water zinc nitrate(Zn(NO3) 2- 6H2O) for the Zn source, with four water cadmium nitrate(Cd(NO3) 2- 4H2O) for the Cd source, the successful synthesis of the ZnO and ZnO:Cd nanorods by hydrothermal method at low temperature(Cd/Zn 0.01, 0.02,0.03 molar, 0.04). By means of X ray diffraction, field emission scanning electron microscope and laser confocal Raman spectroscopy respectively. The crystal structure, surface morphology and crystal internal stress of samples were characterized by. The prepared samples were spin coated on glass substrate cutting uniformity of the film samples, usingdouble beam UV / Vis / NIR spectrophotometer to analyze the transmission of the optical band gap width, and then. Using spectrophotometer instrument on the optical properties of ZnO and ZnO:Cd nanorods was investigated by fluorescence / phosphorescence luminescence. The results show that: ZnO:Cd nanorod crystal structure of ZnO and Cd with different doping concentration of undoped showed six Zn, due to Cd doping reduced the crystal particle size,Cd doped ZnO, the optical band gap of ZnO film width, through the analysis we can see thatthe band gap reduction factors caused by the two aspects below: due to tensile stress exists in the crystal lattice. Two due to the band gap of ZnO in the formation of impurity energy levelsof the other. When the Cd content was 2%, we can see the samples in the presence of energyin 2.67 e V blue photoluminescence peak, and the peak was not found in other samples. The blue photoluminescence peak is due to the electrons from the conduction band to the Zn vacancy(VZn) between the transition from. From the photoluminescence peak also we can see that due to the Cd doping ZnO enhances the purple energy near 2.90 e V ZnO nanorods photo luminescence peak intensity, when the sample is exposed in the air after 5 months, 2% ZnO:Cd nanorod structure is more stable than that of pure ZnO, Cd doped concentration of ZnO:Cd 2% films were different temperature tests show that, when the temperature reached 80 degrees, the sensitivity of 1000 ppm hydrogen has reached 2.34. As the temperature continues to rise, the sensitivity appeared to increase first and then decrease trend in. When the temperature of 220℃ is sensitivity has reached a maximum value of 6.13, the response and recovery time is relatively small.At low temperature 80 C and 220 C thin film gas sensor has good repeatability. In this paper we can see that the ZnO:Cdnanorods can be used not only in the blue violet light emitting devices but also can be used inlow temperature and ultra sensitive hydrogen sensitive device.