Physical Vapor Deposition Graphite Type Of Film

With the progress of modern science and technology and the development of industrialization, the amorphous carbon film because of its good performance has been widely applied to various fields. Due to the amorphous carbon film has high resistivity and good insulation, make it has a good application in the field of electricity, microelectronics, can be used as a MASK which is printed on the circuit board in the process of mass production of integrated circuit plays an irreplaceable role. the amorphous carbon film which has a low dielectric is easy to deposit on the basement, because of this property makes it become next generation integrated circuit dielectric materials. Amorphous carbon film has good chemical stability property present emission performance research is more, the study found that in the process of emission current stability, and other components will not be polluted. The method of amorphous thin film preparation not only confined to the commonly used chemical deposition methods such as chemical vapor deposition(CVD), microwave deposition method, plasma electrodeposition, pulse glow PECVD, physical deposition methods are wider used,such as magnetron sputtering, ion implantation. Compared with the traditional physical vapor deposition, unbalanced dc magnetron sputtering and the high-intensity pulsed ion beam because of its distinctive technology advantage has become the main means of coating preparation. Unbalanced dc magnetron sputtering and the high-intensity pulsed ion beam method preparate thin film surface smooth, no obvious flaws, and the use of performance is very good.This paper discusses the development of membrane technology, Introduces the domestic and foreign research progress of amorphous carbon film, to simulate the diffusion process of carbon ion inject silicon and metal substrate, ion distribution and the incidence range, on the basis of further study on the dc unbalanced magnetron sputtering principle, preparating amorphous carbon films, and detection analysis the amorphous carbon films. The vacuum annealing treatment on the preparation of samples and analyze amorphous carbon films after annealing. Using the orientation of the attached to the body high-intensity pulsed ion beam irradiation technology, using different structure of substrates growth out of a large number of carbon atoms, After vacuum annealing treatment, a large number of carbon atoms which is absorbed before vacuum annealing treatment float to the surface of a substrate, eventually they can grow into a complete study of the possibility of a layer of graphene.Experimental results show that the use of DC unbalanced magnetron sputtering on different substrate materials prepared amorphous carbon film, after vacuum annealing in the amorphous carbon film to ease the stress, the surface becomes bright, surface morphology occurred changes in surface topography changes, through comparative analysis concluded that the optimum preparation of amorphous carbon films for the four processes, vacuum annealing at 800 ℃ after the film surface roughness, its compact good effect. After high-intensity pulsed ion beam(HIPIB)the surface morphology has changed, the carbon content increases, and the surface roughness increased significantly. After the cross-section of the samples were irradiated silicon line scan, depth consistent with carbon ion implantation depth scan obtained. Erbium sample surface is scanned after vacuum annealing and EDS analysis, we found the sample surface topography changes, further increasing carbon content.