The Doped Oxide System Constructing By The Ldh Precursor Pyrolysis Route And Its Opto-Electronic Application Performance

ZnO, NiO and (Zn, Ga)(O,N) are fascinating semiconductor materials with various applications in optical, electricity and magnetics. For improving the crystal microstructure, electrical property, optical property and magnetic property of these materials, element dopping is an effective way usually mentioned. Phsical methods were ultilized for dopping which will lead to element distribution, complicated technology and high cost, so we put forward precursor pyrolysis method to change this phenomenon. Chemical doping which is based on coprecipitation has the advantages of mild condition and uniform doping. LDH is an excellent precursor for preparing metal doped oxide as the uniform distribution of element, chemical method preparing doped semiconductor has great significant for using LDH as precursor to prepare doping oxide and research their optical and electricity properties.In this dissertation, NiO:Al、ZnO:Al and (Zn,Ga)(O,N) were constructed by pyrolysis of LDH precursor. SEM, XRD, TEM, HRTEM, STEM and EXAFS were used to research the phase composition, structure and morphorogy. And we also prepared the thin oxide film by spin-coating pyrolysis method and take advantage of electrochemical workstation and solid UV-vis spectrum for application research.In the XRD pattern of NiO:Al only the diffraction peak of NiO was shown which indicate the product constituted by single pure crystallinephase. And Al-dopping leads to lattice contraction and large specific surface, it will be benefit for the electron conduction. The performance of films was evaluated using UV-vis transmittance spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), chronoamperometry (CA) techniques. It is demonstrated that Al content can significantly influence the crystallinity of Ni-Al LDH and NiO films. In addition, the ratio of Ni3+/Ni2+ also varies with Al content which can lead to different performances in optical and electrochemical fields. Among the resulting films, NiO film prepared from Ni-Al (19:1) LDH show the best performance with a high transparency of 96%, with large optical modulation range (58.4%), fast switching speed (bleaching and coloration times are 1.8 s and 4.2 s, respectively) and good durability (15% decrease after 200 cycles).ZnO:Al was prepared by the same method which was mentioned above. Then UV-vis and PPMS were used for testing the characteristic of transparent conducting. Because the cation adjustable range of Zn-Al LDH is smaller than Ni-Al LDH, the high content of Al will lead to high resistivity.And we research the preparation condition for (Zn,Ga)(O,N) in ammonia and we successfully synthesized it. Then we also research the realationship between feeding ratio and actual ratio. At last we also found it show great...