| Cd1-xZnxTe is an important II -VI compound semiconductor with excellent optical and electronical properties. When x is equal to 0.04, it is used as epitaxial substrates of Hg1-yCdyTe. When x is in the range of 0.05-0.2, it can be used for the fabrication of high quality x-ray and Y -ray detectors, photoelectrical modulators, film solar cells and so on. In particular, the x-ray and y -ray detectors made from Cdo.9Zno.1Te are able to reduce the leakage current and improve the efficiency for detection of radiation. Besides, this mateial can work at room temperature for the applications of nuclear detector.In this paper, the coating technologies of carbon film on the inner wall of quartz ampoule were studied, which were important for the growth of Cd1-xZnxTe. By the ameliorated techniques, the carbon films with high quality were obtained.The ingots of Cd0.9Zno.1Te and doped Cd0.9Zn0.1Te:In were produced by ACRT-Bridgman method, and their composition distribution, optical and electronical properties were tested. The results reveal that the doped ingot owns higher resistivity and lower IR transmittance. But, there are no obvious differences between the composition distributions of the two ingots.The doping of In of CdZnTe wafers was also achieved through annealing by adding In in the annealing sources. The specific parameters were established according to the thermodynamic principles of multi-component system. The properties of the wafers, including composition distribution, optical and electronical properties, were tested before and after annealing. The results reveal that the presence of In does not affect the distribution of main components, but it deteriorates the IR transmittance serously. During this process, the level of doping concentration exceeds the density of Cd vacancy in the crystal. In addition, the preparation of Au contact on Cd1-xZnxTe wafers was studied. After further thermo-treatment, the stable ohm Au contact was achieved. |
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