Of Poss-based Low-k Electric Preparation And Characterization Of Porous Materials,

In the microelectronics industry, demand for lowing line dimensions has led to extensive efforts to explore porous materials. In this paper, silsesquioxanes with functional organic substitutes were used as molecular template. The preparation of low dielectric films with narrow pore size distribution was discribed. The effect of preparation technics and structure of surfactant on the film's property was studied. The main contents of this paper consist of the following points:1. The research progress of low dielectric materials, mechanism of template synthesis of silicate film and some applications were summarized. A new method was brought forward to solve the present deficiency in preparation of low dielectric silicate film.2. Octamethyloctasilsesquioxane was synthesized and characterized by FTIR,29Si NMR and single crystal XRD. The effect of different condition on the yield of octamethyloctasilsesquioxane was studied, and the mechanism of formation of octamethyloctasilsesquioxane was discussed.3. The low dielectric silicate films were prepared by using POSS sol-gel from hydrolyzation and condensation of Y -methyl acryloyloxy propyl-triethoxysilane as template, and characterized by AFM,BET and Ellipsometer. A film with dielectric constant as low as 2.7 was obtained.4. The films with controllable pore size were achieved by adding different surfactant in POSS sol-gel. The effect of surfactant concentration and structure on the pore size and dielectric constant were studied. The nanoporous film with surface area as high as 1217.2 m2/g, pore volume 0.75 cm3/g and dielectric constant 1.7 was discribed.