Processing And Surface Quality Of The Crystals Of Cdznte By Control

CdZnTe (CZT) crystal material is widely concerned for its excellent photoelectronic performance. It is not only the satisfactory substrate used for the epitaxy growth of infrared detector material HgCdTe, but also attractive candidates for the manufacture of high quality X-ray or y -ray detectors, photoelectronic modulator, solar cell, and laser windows etc.No matter what the crystal is used as detectors or epitaxy substrate, it is of vital importanteto obtain high quality CdZnTe crystals with perfect surface.At present, the standard of the surface quality of CZT wafers has not been constituted in China. We figure the quality of the surface through three sides: surface roughness, the state of surface stress and surface component.As CZT wafer is so gentle and crisp that the surface processing is a hard task. The destination of our research is to obtain high precision, non-damages and clean surface. We used mechnical rubbing and polishing replace handwork to reduce total thickness variation (TTV) of CdZnTe wafers and surface damage layer. By comparing different polishing methods, we find out an appropriated chemical mechical polishing (CMP) for CZT wafers.