Diamond With Boron And Electrical Properties Of Iron Based Catalyst Characterization

The pure diamond crystal, one kind of good insulator, doesn't have free electrons. Under the room temperature, its resistance is 10¹³Ω·cm. The diamond will become typical semiconductor when mixed with a few of boron atoms. Boron-doped diamond has outstanding semiconductive characteristics, such as wide band gap, high puncturing field intensity, high mobility of current carrier, low dielectric constant and good heat conductivity. In addition, it has stable chemical character, high hardness, good abrasion and radiation resistance. Owing to the above excellent characteristics, the boron-doped diamond is very suitable to be used for making high qualitical electronic devices that can work in high temperature and execrable working conditions. It's a promising semiconductive material with high temperature and high power.In view of the few reports about the electrical characteristics of diamond synthesized under high temperature-high pressure both at home and abroad, this paper dealt with the relation curve of resistance-temperature of boron-doped diamond measured by a self-made resistance-temperature apparatus and then analyses its electrical characteristics. The morphologies, microstructures and boron-doped states of the diamonds synthesized by Fe-based and boron-added Fe-based catalysts were systematically studied using stereoscopic microscope, scanning electron microscopy (SEM), electron probe microanalysis (EPMA), X-ray diffraction (XRD) and Raman spectrum (Raman) methods. Further, general characteristics were measured by differential thermal analysis (DSC) and compressive strength apparatus.The boron-doped diamond single crystals with cube-octahedral shape, MBD6 grade of compressive strength were synthesized using boron-added Fe-based catalyst and carbon source under high temperature-high pressure.The comparison of the nucleation rate, dimension, crystal model, color and...