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The Plzt Ferroelectric Electro-optic Thin Film Preparation Process Research

Posted on:2007-04-09Degree:MasterType:Thesis
Country:ChinaCandidate:Z D TangFull Text:PDF
GTID:2191360185956351Subject:Materials science
Abstract/Summary:PDF Full Text Request
As a typical Electro-optic materials, lead lanthanum zirconate titanate (PLZT) with its excellent transparency and strong electro-optic effects, can be extensively used in electro-optic, integrated optic and other fields. Recently, the fabrication, structures, properties and applications of electro-optic materials have obtained significance in the novel materials science in the world.In order to fabricate excellent electro-optic materials, this paper focused on the choice of electro-optic materials, the fabrication of ceramics target, developing new RF magnetron sputtering system, and the preparation of the electro-optic film, etc. The following results were obtained.(1) It was found that, for electro-optic application, the PLZT 8/65/35 had optimal structures and properties. The optimized preparation conditions were pre-sintering temperature of 910℃, sintering temperature of 1100℃and keeping temperature duration for 6 hours. For SnO2 ceramic target, the optimized preparation conditions were pre-sintering at 1100℃, sintering at 1500℃and keeping temperature duration for 6 hours. Uniform and compact PLZT and SnO2 ceramic targets, which diameter were 212mm and 221mm, respectively, had been successfully fabricated.(2) A rotating magnetic field RF magnetron sputtering system had been designed and set up, which showed high utilization efficiency of target, high films uniformity, and high deposition rate, etc.(3) The PLZT and SnO2 thin films were investigated by AFM, XRD, SEM, and spectral photometer. The optimized processing parameters of preparing these films had been found. The processing parameters of preparing PLZT electro-optic films were 400℃of substrate temperature, 100W of sputtering power, 1:6 ratio of oxygen to nitrogen and 650℃of annealing. The processing parameters of preparing SnO2 film were room temperature of substrate temperature, 200W of sputtering power, 1:2 ratio of oxygen to nitrogen and 600℃of the annealing temperature.
Keywords/Search Tags:Electro-optic films, PLZT, SnO2 transparent electrode
PDF Full Text Request
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