Font Size: a A A

Sol-gel Preparation Of Aluminum Doped Zinc Oxide Thin Films And Their Performance Study

Posted on:2008-04-07Degree:MasterType:Thesis
Country:ChinaCandidate:C R YangFull Text:PDF
GTID:2191360212975249Subject:Applied Chemistry
Abstract/Summary:PDF Full Text Request
Al-doped zinc oxide thin film (ZnO:Al) is one kind of wide band gap semiconductor materials. It has high transmittance for the visible light and high absorption for ultraviolet. The ultraviolet absorption edge of the films can be adjusted into the shorter wavelength range (blue-shift) with Al content increasing. Al-doped zinc oxide thin film is therefore hopeful to be used in the field of short wave photoelectricity device such as UV detector. So the preparation and investigation of ZnO:Al thin films is useful and meaningful. In the paper the main duty was to prepare ZnO:Al thin films and to investigate the microstructure and property of the films, and offer the experimental basis ZnO:Al thin film to the other to prepare UV detector.The zinc oxide thin films were prepared on glass, quartz and silicon (100) by sol-gel process in the experiment, the effect of process condition such as substrate, thickness, preheated temperature and annealed temperature on the structure of the films was studied. The results were: the crystalline of zinc oxide thin films on silicon (100) was best of all, and higher preheated temperature and annealed temperature was better to the crystalline of the films.The ZnO:Al thin films were prepared through Sol-Gel process, and the structure and property of the films was studied in details. When the Al content increased from 0% to 30%, the intensity of (002) diffraction peak decreased. The O1s binding energy increased with the increase of Al content, Zn outer electron binding energy increased by 0.4~0.5eV when Al content was 30% and 50%. UV absorption edge of ZnO:Al thin films blue-shifted to shorter wavelength with the Al content increasing, the end of UV absorption edge shifted lower 300nm for the films with Al content of 20%~50%. The thin films with Al content of 30% had good UV response property, and the photo current reached 400 microampere under the 260nm light acting on (5V bias voltage).
Keywords/Search Tags:Al-doped zinc oxide thin film, absorption edge, blue-shift, Sol-Gel, UV response
PDF Full Text Request
Related items