| As a basic research method, the semiconductor bridge (SCB) will be used as the energy transfer element to form plasma. Then the lead styphnate samples will be ignited by such elements, and the responsible performances for each sample to the plasma are observed systematically. Thus the respondence rules of igniting process can be gained.The main content of this article includes: (1) the temperature measurement of the SCB plasma; (2) the relation establish between reacting time of the charge and the input energy of SCB plasma; (3) mathematical simulation to the interface between the charge and the SCB using the sheath plasma theory.The research will show: Semiconductor bridge on the role of temperature, duration of the electronic density parameter analysis, Results for the meet to determine whether the three characteristics of plasma parameters of the request, Note Semiconductor Bridge did have a role in the plasma.The research work will cover:To the rules of SCB plasma temperature testing as follows: (1) under a same capacitance level ,increasing of voltage, the temperature increases as well; (2) under a same voltage level, the plasma temperature raise while capacitance increases; (3) the measured temperature range is between 1800K to 7800K,and the existing time of the plasma maintains a period of 30μs-100ps.To the ignition time (t): (1) the t becomes shorter as the increase of the input voltage; (2) the t can also become shorter while the capacitance increases; (3) the t becomes longer with the raising of the size of granular LTNR; (4) under a lower charge pressure, the change of has little influence to the t; (5) with a higher input energy, the t becomes shorter, and the inclining scope smaller and smaller, approaching to a constant at last. The curves of the t vs input energy approximately conform to exponential function.Based on the typical ignition process of SCB, a sheath model was built elementarily, which is the basic theory for further studies. |
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