Refractory Metals And Thermodynamics Of Interfacial Reactions Between The Silicon

The refractory metal silicides are of great significance in morden electronic packing.Thus,investigation of the interfacial reaction between refractory metal and silicon,in order to predict and control the microstructure evolution during the interfacial reaction,has important theoretical significance,and can help guiding fomulating of packing technology.In this work,based on the project supported by National Science Foundation of China(No.50671122),the thermodynamic of the interfacial reactions between refractory metal and silicon were investigated through the CALPHAD method.This work was comprised of three parts as follows:1.The Pt-Si and V-Si binary systems were optimized.Ordinary subitutional solution model were employed to describe Liquid,Bcc and Fcc phases,V₃Si phase was described by compound energy formalism,and all the other intermetallic phases were treated as stoichiometric phases.Calculated results were well consistent with that of experimental.Combined with the optimized parameters in the literature for the Pt-V binary system,the Pt-V-Si ternary system was extrapolated.The liquid project and several isothermal sections were calculated.2.The Ag-Pt binary systems were optimized.Ordinary subitutional solutions were adopted to model Liquid and Fcc terminal solution,and Ag₁₅Pt₁₇phases was treated as stoichiometric compound.Calculated phase diagram and thermodynamic data were both consistent with the experimental work.Combined with the optimized parameters of the Ag-Si binary system in the literature and Pt-Si binary system in this work,the Ag-Pt-Si ternary system was extrapolated.The liquid project and several isothermal sections were calculated.3.By using the thermodynamic parameters of the V-Si binary system, formation of IMC(s)in binary reaction couples V/Si at different temperatures has been successfully explained.