Based On Schiff Base-pt (ii) Photoluminescence And Electroluminescent Phosphorescent Material

件的电致发光位置为571 nm,最小工作电压为6 V;在20 V驱动电压下,亮度达1456cd/m²。 photoluminescent properties was analysized. Thirdly, three new complexes of [K₂(PtL¹)₂Pt(CN)₄]·1.5H₂O(5), [K₂(PtL¹)₂Pd(CN)₄]·1.5H₂O (6) and [K₂(PtL¹)Ni(CN)₄]·0.5Et₂O (7) were obtained by reacting the PtL¹ precursor with K₂Pt(CN)₄, K₂Pd(CN)₄ or K₂[Ni(CN)₄], respectively. Their one-dimensional infinite helical stackings of structures were characterized from the complexes of 5-7, and their photoluminescent properties in solution and solid states were described. Forthly, further the reacting PtL¹ or PtL² precursor with K₂Pt(CN)₆, respectively, lead to two different self-assembled complxes of [K₂(PtL¹)₂Pt(CN)₆] (8) and [K₂(PtL²)₂Pt(CN)₆] (9), which had different photoluminescent properties in solid states. Finally, one OLED device with selected phosphorescent material of PtL² doped in the light-emitting layer was constructed. The device showed a minimum applied voltage of 5 V and a maximum luminance of 1456 cd/m² with the applied voltage of 20 V.