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Based On A Complex Thin Films And Memory Devices And Single-sided Nano-structure Gold Film

Posted on:2010-04-10Degree:MasterType:Thesis
Country:ChinaCandidate:Z Q HuoFull Text:PDF
GTID:2191360275991371Subject:Physical Electronics
Abstract/Summary:PDF Full Text Request
This thesis is composed of two parts as follows:Electrical memory device based on complex thin filmMultifarious new electric memory materials and associated fabricating technologieswere brought forward, along with the development of information storage technology.In this thesis, a method, with solution reaction, to fabricate dielectric layer of electric memory device was described. DMMM-Cu and CuSCN dielectric film were prepared by the reactions of Cu and DMMM-Na/H2O solution, Cu and KSCN/CH3CH2OH solution respectively. Cu and Al electrodes, with square crossingwiring, were planted on the two sides of the dielectric layer respectively. A memory device with write once read many times property was yielded.By optimizing the parameters in fabricating process, the yield and HRS/LRS rate of Al/DMMM-Cu/Cu devices can be larger than 90% and 107 respectively. And the Cu/CuSCN/Al devices, with both advantages of Al/DMMM-Cu/Cu devices,have a narrow threshold voltage distribution. If the thickness of Cu film, which took part in the solution reaction, was 25nm, then the threshold voltage of more than 90% of the devices would distribute in the range of 3.75±0.25V.Fabrication of gold film with single-sided nanostructuresWith the development of nanomaterial science, a new kind of gold film, which contains nanostructure, has gradually been focused on, because of its stable chemicalproperty and bright future in the aspects as molecule probing, energy storage and catalysis.A new method to fabricate nanostructure at gold film surface through inter-facialdiffusion process is described in this thesis. A Cu/Au double layer film was prepared by vacuum evaporation, thereafter, annealing, and chemical etching was used to remove the component of copper, gold film with single-sided nanoporous was yielded. The surface morphology of the Au film was analyzed by scanning electronic microscope (SEM), the influence of temperature and time duration in annealing was discussed. When a mono-layer of p-thiocresol or 4,4'-bipyridine was adsorbed on the surface of this nanoporous gold film, surface-enhanced Ramanscattering (SERS) was identified.The present simple and low cost fabrication process could result in single-sided nanoporous gold film with large area, which may promise potential application in molecule probing.
Keywords/Search Tags:complex thin film, write once read many times, threshold voltage, nanoporous gold film, diffuse at interface, surface enhanced Raman scattering
PDF Full Text Request
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