Super Computer Simulation Of The Electroless Copper Plating

There are deferent sizes and depths of the microhole in the fabrication process of the semi--conductor copper interconnection. In order to fill these micro-holes completely and to decrease the difficulty in CMP technological process, computer simulation of bottom-up filling for electroless copper deposition has not only great theoretical value, but also has application value. Although the computer simulation of bottom-up filling for electroplating copper deposition has been reported, the mathematical model , the mechanism of the bottom-up filling and dynamic analysis of deposition process have not been reported.Theoretical analysis and numerical simulation methods for the electroless copper deposition is presented in this paper. Due to the effect of the additive SPS for the deposition rate of electroless copper solution, in order to realize industrialization of the bottom-up filling of electroless copper deposition, we have to master the mechanism of bottom-up filling for electroless copper deposition, the chemical species and concentration change of the chemical-copper solution with additive SPS. Based on the control volume method theory and adsorption properties, the mathematical model of Proliferation-Adsorption System was established. Using statistical methods for data processing, The relationship between deposition rate of electroless copper plating and SPS concentration was established. The dynamic reseau model was used to study the boundaries speed and the proliferation of games with microholes under different times. Simulation indicated that this technology can capture the interface movement and deformation location caused by proliferation, have the accurate copper deposit thickness, concentration and time evolution.The major contributions include the following aspects:First, according to the characteristics of the micro-hole conception of control volume method, hydrodynamics, mass transfer and chemical kinetics study of the basic theory, obtained the equation which applied for the diffusion-controlled micro-hole formula. Similarly, in accordance with the characteristics of copper film deposition and the adsorption theory, porous borders adsorption model. Set up a mathematical model for analysis and simplification of the actual situation in line with the selection of boundary conditions, using finite volume method for numerical simulation of the simulation, through the latter part authentication, set up by a reasonable mathematical model to describe the mass transfer inside the porous environment.Second, for new system and processes, we can have several mathematical models from a number of mechanism and assumptions. Analysis with statistical methods, find out the most appropriate model from a number of models. According to the measured data, adopt correlation analysis and fitting statistical methods to analysis and testing the function of different sample data. Finally determine the electroless copper rate and the quantitative relationship between additive SPS. Provide evidence for the computer simulation of the next stage.Third, use the method of finite volume simulation to solve the governing equations with separation algorithm which is established take the case of micro-hole with the hole depth 1. 2μm and pore diameter 0. 4μm, and analysis the distribution of the two-dimensional concentration distribution during different times.Finally, considering that the dynamic growth process of the copper. This article adopts moving-mesh method which combined with spring analogy and local mesh generation, to actualize rapid, quality large-displacemnet of the micro-hole boundary. Mainly expounds the generating principle and method of moving-mesh method. Attempts to find out the suitable parameters for bottom-up fill. Successfully solve the relationship between SPS concentration consumption and growth rate, and established the mathematical model, to ensure that the quality of mesh generation. Based on C language, compiled the users self defining program and implementation the dynamic simulation of electroless copper filling.