High-performance Ferroelectric Thin Films, Structure And Performance Research

Ba1-xSrxTiO3(BST) thin films have been extensively investigated due to their strong electric-field dependent dielectric constant. In this work, The BST graded and the doping films of Yttrium or Manganese and Yttrium/Manganese were prepared by using improved Sol-gel method and the effect about the appearance, crystallization and dielectric properties were investigated. Main research results are summarized as follows:1. The stoichiometry and nonstoichiometry BST thin films with doped Y, Mn, Y/Mn were prepared by improved Sol-gel method. The XRD,AFM analysis methods were used to analyze the surface structures and crystallizations of BST thin films. The surfaces of doping films are good and the dielectric properties show high tunability and low dielectric loss tangent. The doping Y/Mn films are best.2. The stoichiometry and nonstoichiometry BST thin films with concentration gradiant doped Y, Mn, Y/Mn were deposited by improved Sol-gel method. The surface structures and dielectric properties were studied. The result shows the stoichiometry and nonstoichiometry thin films'surface structures and dielectric properties were improved. The nonstoichiometry thin films show lower dielectric loss tangent and higher stability.