Technology Research, The Preparation Of Ito Films

Since 1990s, the rapid development of panel display promotes the progress of photoelectric thin films, and technology requests appear in the photoelectric coating field. As far as a new type display device-OLED (organic light-emitting diodes), the film requires better conductibility as well as the transparency and the smooth surface. In response to the demands of OLED, photoelectric thin film-ITO (In₂O₃:SnO₂) is prepared and discussed. Due to big carrier concentration and optical band gap, transparent conductive oxide thin films exhibit outstanding optical and electrical properties, such as low resistively and high transmittance in the visible range etc. At present, this kind of material system include In2O3,SnO2,ZnO and dopant system In₂O₃:Sn(ITO),SnO₂:Sb,SnO₂:F,ZnO:Al(ZAO) etc. Among them, SnO₂(TO) and In₂O₃:Sn(ITO) films have been widely used in panel display and solar cell as transparent electrode. Many processes are used to prepare transparent conductive films, such as magnetron sputtering, vacuum reactive evaporation, chemical vapor depositions, Sol-gel, laser-pulsed deposition. Among these methods, magnetron sputtering is the most widely used technique for preparing thin films, owing to its high deposition rate and good uniformity etc. ITO films were prepared by DC magnetron sputtering in the mixed argon and oxygen gas atmosphere, using In₂O₃ mixed with SnO₂ (10wt %) as the target. The films were figured by four-probe testing facility, XRD, SEM and visible light photometer. It was concluded that, the structure of ITO thin films were influenced by many working parameters such as oxygenic pressure , proportion of argon and oxygen, substrate temperature ,anneal temperature, anneal time, anneal atmosphere, the distance between the target and the board, sputtering power and so on. Considering many factors influenced the performance of ITO films, experimentations were scheduled to find the dominating factors by orthogonal test method. As a result, the mixed argon and oxygen gas atmosphere and anneal temperature were mostly important to the...