Pld Growth Of The Lsco Conductive Oxide Film Electrodes

La_0.5Sr_0.5CoO₃(LSCO) is a conductive metallic oxide which has a pseudo-cubic perovskite structure with the resistivity of 90μ?·cm at 300K. It has similar crystal structure and good lattice matching with extensively studied ferroelectric thin films (PZT,BST,etc). Thus LSCO is considered to be one of the ideal electrode materials applied in ferroelectric thin films devices. And it is important and valuable for application to systematically study the preparation of LSCO thin film electrodes and the integration of ferroelectric thin films on the LSCO electrodes. So the growth technology of LSCO thin films on different substrates has been studied.The round plate LSCO ceramic targets were prepared with traditional sintering technology. Dense LSCO ceramic targets without cracks were prepared with cobalt nitrate excess coefficient 1.05 and pressing pressure 8MP, sintered at 1350℃for 3h. The XRD spectrum is consistent with the standard cards of LSCO powder. And the SEM photos suggested smooth surface topography without cracks.LSCO thin films were deposited on (001)STO and (111)Pt/Ti/SiO₂/Si substrates by pulsed laser deposition(PLD). The effects of deposition temperature, oxygen pressure and pulsed laser energy on epitaxial growth and electrical properties of these LSCO films were systematically studied. Full (001) epitaxial LSCO thin films were deposited on (001)STO substrates. The resistivity at 300K and RMS are about 193.4μΩ·cm and 3nm. But LSCO thin films on Pt/Ti/SiO₂/Si substrates is (110) oriented, the resistivity at 300K and RMS of which are about 62μΩ·cm and 10nm. Full (001) epitaxial LSCO thin films are easily prepared on the (001)STO substrates, but LSCO/ Pt/Ti/SiO2/Si structures have smaller resistivity compared with those on (001)STO substrates.The Ni-Cr/BST/LSCO/STO flat capacitors were ready-made. The measured relative dielectric constantεr and the loss tangent of BST films are about 470 and 0.036-0.060, respectively.