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Of Fe <sub> 3 </ Sub> The O <sub> 4 </ Sub> Thin Film Characterization And Preparation

Posted on:2007-04-08Degree:MasterType:Thesis
Country:ChinaCandidate:Y HuFull Text:PDF
GTID:2192360185955807Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Fe3O4 is a kind of classic half-metallic material. It has the highest spin polarization about 84% measured in room temperature and provides Curie temperature with 858K. At present, the characteristics for single-crystalline Fe3O4 films have been researched in detail but polycrystalline Fe3O4 film is seldom researched. Under such research background, this article focusses on fabricating and measuring the polycrystalline Fe3O4 thin film and a set of magnetoelectronics transit test system is designed according to the laboratory request.In this paper, the emphasis of research is to build a measurement system of magnetoelectronics transit, and we fabricate Fe3O4 film by dc magnetron sputtering.The main contents of research are as follows:1.Adopting virtual instrument and single chip technology, automatic measurement of electromagnet's magnetic field and system of magnetoelectronics transit is realized.2.Fabricating uniphase Fe3O4 film by dc magnetron sputtering, the influence of sputtering power, annealing temperature is discussed in detail and the optimum fabricating condition is found.3.The influence of Ta buffer introduced to Fe3O4 film is investigated in detail.4. Using our measurement system, the magnetoresistance effect of the polycrystalline film is measured.The measurement system of magnetoelectronics transit is proved with high accuracy and good repetition in actual use, which provides a kind of effective and trustworthy measure method for material research. During the course of film fabrication, we find that sputtering power and annealing temperature are the most important factors that influence the structure and quality of Fe3O4 film. Researching them ,the optimum condition of fabricating pure Fe3O4 is founded. Otherwise, using the Ta buffer layer can effectively reduce the surface roughness. In addition, measured by our measurement system, the polycrystalline the film has similar negative magnetoresistance effect to single-crystalline film, so it is potential to be applied in spintronic devices.
Keywords/Search Tags:Fe3O4 film, magnetoresistance effect, virtual instrument
PDF Full Text Request
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