Preparation And Characterization Of Copper Indium Selenide Solar Cell Materials And Rtp Design

In the 1970s the"Energy Crisis"occurred over the world, which took the petroleum as representative. It made people realize the limitation of"conventional energy". As the fossil energy sources such as oil and natural gas being consumed rapidly, the problem of energy sources is being paid more and more attention by the world. Solar energy, which is a sort of reproducible clean energy, has a lot of advantages over other energy sources. The conversion of sunlight to electrical power is an irreversible trend in the field of energy utilization. Cu(In,Ga)Se₂(CIGS) has become a hot topic in solar cell field in recent years, which has very high theory conversion efficiency(as high as 30%), very-high-absorption coefficient(105 magnitudes), long-term stability and good tolerance for defects and impurity.The main contents and results in this paper are as following:(1) Copper Indium Diselenide(CIS) thin films were electrodeposited, and the influence of elements'proportion in the plating bath to the precursor's composition was studied.(2) The precursors were selenized in the tube furnace, and the influence of different selenized factors to film's quality was studied. The factors contained temperature, selenized time, and Cu/In proportion in the precursors. Good crystalline quality films were obtained under a selenized temperature of 550℃, the Cu/In proportion of 1:1 in the precursor, and the time of 30 minutes.(3) Using micro-Raman scattering spectrum to observe the phase formation in the precursor under different temperature during the annealing process. Without protection of a high Se vapor pressure, intermediate In-Se, Cu-Se, CuAu-ordered CIS and many other selenides were easily formed in the CIS film, which have atomic structures arranged in a way close to CIS. The formation temperature ofγ-CuSe is 170℃. Binary selenides(In-Se and Cu-Se) were transformed to the CIS by interdiffusion and reaction of the mobile Cu and Se atoms/ions under high Se vapor pressure.(4) Design and assemble a furnace of Rapid Thermal Processing(RTP). The furnace's highest heating rate is 25℃/s.