Titanium Lead Zirconate Ferroelectric Thin Films Of Polyvinylidene Fluoride Copolymer Preparation Process And Electrical Characterization

Ferroelectric materials have been widely used because of their unique properties. The ferroelectric polarization can be switched in a different direction to store the logic information for the memories.PZT thin films were prepared via Sol-gel method. Polarization-electric(P-E) hysteresis loops, retention, and fatigue were measured. The switching process of PZT was studied. By varyig doamain switching currents,we understand the kinetics of PZT domain switching.High-k Al2O3 layer was deposited through ALD method on Pt/SiO2 substrates. After that, the PZT film was grown on their top.Ultrathin ferroelectric films could suffer from bad polarization retention due to epitaxial stresses and interfacial effects. However, thing changes, once ultrathin PZT films are incorporated with a few nanometer-thick Al2O3.The ferroelectric properties, such as fatigue and retention, show obvious improvements in our experiment. The ultra-thin Al2O3 layer which acts as a tunnel switch in the progress of domain switching affects ferroelectric properties in many ways.Poly(vinylidene fluoride) (PVDF) is one of the most widely used polymer materials, due to its good piezoelectricity and piezoelectricity. Nowadays, PVDF thin films have been paid more and more attentions in material science. In this work, P(VDF-TrFE)(70:30) films were prepared by cast coating method. Consequently, ferroelectric properties of P(VDF-TrFE)/PSSH were studied.The topography of the film surface was measured through SPM, and the ferroelectricity was studied through piezo-response characterization. The derived the coercive voltage through a piezo response is lower than that obtained from a P-E hysteresis loop in a large capacitor.