.cmos / Of Soi And Ferroelectric Memory (feram) Technology

High speed, low voltage and radiation-hardness are main three advantages presented by SQl technology over bulk. Since the cost to produce 501 materials was high in the past, the application of SOT materials was limited in military industry and aerospace to fabricate high temperature and radiation-hardness circuits. With the fast development of mobile communication and portable electronic products, SQL will be the mainstream of IC technology in low-voltage and low-power application. Since SQL is one of the key technologies of microelectronics in national defense, American and other western countries embargo it to China in long time. Supported by innovation of the reative projects?of the Chinese Academy of Sciences, we have studied the process of CMOS/SQL devices, and fabricated CMOS/SOT twelve-bit Digital-to-Analog converter and eight-bit Analog-to-Digital converter. According to the task of the National Advanced Materials Committee of China, We have also investigated FeRAM that has important applicable prospect in the information field as the other part of my paper. FeRAM is a kind of nonvolatile memories. Compared with E2PROM, FeRAM has advantages including fast writes, high-write endurance and low power. The research of FeRAM is a focus in the Integrated Ferroelectrics. The main work of the paper is as below: I Co-operated with Sichuan Institute of Solid-State Circuits, we have participated in the discussion and design of CMOS/SQL twelve-bit Digital-to-Analog converter and eight-bit Analog-to-Digital converter. 2.Investigated the process of CMOS/SQl devices. Through decreasing the thickness of the top silicon of SOT by oxidation several times, we have fabricated Full-Depleted MOS/SOT transistor successfully. Optimizing the doping process of MOS/SOI transistor, we find that the value and distribution of implantation energy are the most important factors that influence the doping. We found out the optimized conditions for boron ions implantation are: the thickness of SiO2, which act as the buffer layer, is 20-3Onm; the energy of implantation and the dose of boron are 4Okev and 4-8 x 1012/cm2, respectively. 3. Optimizing the process of CMOS/SQl circuits under the research of MOS/SOL devices. Working together with Sichuan Institute of Solid-State Circuits, we have fabricated CMOS/SQL twelve-bit Digital-to-Analog converter and eight-bit Analog-to-Digital converter successfully using the 501 substrate. The result of the Functional measurement of converters indicates that performance of the circuits reaches our expected functions. 4.Designed 4 x 8 bit FeR.AM(LC/TT) by ourselves, and finished the layout of it. 5.Investigated the process of FeRAM. Complete the entire process of FeRAM, and find that the adhesion between Pt(top electrode) and PZT is not so good, and it becomes much better when the sample is annealed under 500 (30 minutes). 6.After investigating the model of Ferro electric capacitance, we realized the ZSTT model, simulated the behavior of read and write operation, optimized the area of the Ferro electric capacitance.