The Lpd Method To Produce Silica Films And Their Characterization

Oxygen-rich silicon oxide thin film used as passivation layer of gallium arsenide surface has been prepared by liquid phase deposition (LPD) at temperature 40℃. The thin film has been studied with Energy Dispersive X-rays (EDX), Auger Electron Spectroscopy (AES) and Fourier Transform Infrared (FTIR). EDX spectra show that the thin film consists of Si and O elements, atomic ratio is 1:6, instead of 1:2. AES spectra suggest that the average growth rate is approximately 1.43 A/min. So slow growth rate ensures the uniformity and density of the thin film. FTIR spectra indicate the existence of chemical bonds on the interface. Moreover 7.8MV/cm dielectric breakdown field proves that LPD silica can be used as insulators in ultra-large-scale integration. And furthermore, we study the two dimension periodic microtips grown by self-assembled LPE using LPD silica as lithoprint, the experiment proves that it is an excellent thin films used as resist layer during the microtips growth.