| SOI technology is one of the important mainstream integration technologies. It offers excellent isolation for semiconductor devices, and has advantages such as: reducing parasitic effects, high speed, resistance to radiation, high integrated density. The paper is to propose a novel SOI high-voltage structure and to design a SOI power switch IC based on epitaxial SIMOX substrate for an institute, which will be used on firing controlling system. We have done the following work in this paper: 1. Proposal of a novel high-voltage SOI lateral structure (TSOI), and establishment of its blocking theory; 2. Proposal of devices based on epitaxial SIMOX SOI (ESOI) substrate; 3. Designing power switch IC based on ESOI substrate.During the research of the novel high-voltage SOI lateral structure, we established its blocking theory based on Poisson Equation, which classifies its blocking mechanism by describing the potential distribution in the drift region very well when the device is in the blocking state. Comparing with conventional RESURF structure, the novel structure has only half the device length and 1/3 of the on-resistance as well as comparable breakdown voltage. We have also done some worked on the SOI composite structure.On the research of SOI power switch IC, we proposal the devices based on epitaxial SIMOX substrate. We studied the RESURF, trench-gate, 3D-RESURF LDMOS. We designed the power switch IC based on epitaxial SIMOX substrate, satisfying the requirements of the user. This IC can sustain 60~80V shutdown voltage overshot. It also has short protection and voltage overshot protection block. Devices and ICs based on ESOI have the advantages of not only cheaper substrate, good performance of SOI technology, but also obtaining a certain breakdown voltage and optimization of self-heating effect. Up to present we have prepared the epitaxial SIMOX substrate (I layer 0.37um, Silicon layer 2.8um), and done the circuit design, process integration, device simulation and some layout design). |
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