The .80 C196kc Scm Neutron And ¦Ã Ionizing Radiation Effects

For the syntheses of the irradiation environment, the synthetical radiation effect was chosen to study. Generally, the SCM uses the CMOS technology to make, which is sensitive to the ionization irradiation, so that the synthetical ionization effect was emphasized. The ionization irradiation effects were researched for the very large scale integrated circuits(VLSI) made with CMOS technique under the neutron & y -ray synthetical irradiation environment of the reactor. Through the experiments of the synthetical irradiation effects for the different 80C196KC20 and PSD501B1 SCM(Single Chip Microprocessor) system chips, it was found that the static current (ICC) did not increase apparently. At last, the conclusion was got that under the neutron & γ -ray synthetical irradiation environment of the reactor, ionization effects of neutron on the VLSI made with CMOS technology was weak, and more importantly, the displacement effects of neutron induces the decrease of mobility ratio and density of charge carrier, which causes the decrease of the total static current, so it compensates the increase of the static current caused by the synthetical ionization effects of neutron & γ-ray. The research of this article has got a lot of valuable data, which elementarily provide a firm foundation for the future work.