Research And Design Of Multi-band Cmos Low Noise Amplifier Lna

With the development and enrichment of various wireless communication standards, multi-band and multi-mode application requirements are brought to RFIC design. The realization of multi-band LNA in multi-band wireless receiver has become an important subject.The basic theory and crucial technology of concurrent multi-band LNA are studied in this thesis. A specific concurrent four-band (GSM0.9GHz/DCS1.8GHz/PCS1.9GHz/ TD-SCDMA2.0GHz) LNA is designed with the mobile communication standards.Firstly, the passive devices and noise of MOS transistors in RFIC, RLC network and L-transform used in impedance-transform are introduced and discussed. The concurrent multi-band LNA is researched in great details after comparing various realistic method and characteristics of multi-band LNA. The noise matching, input and output matching are included. Especially for the last one, a new multi-band output network design manner that fulfills both output matching and power gain requirement at the same time is presented.Secondly, the nonlinearity of concurrent multi-band LNA is studied and discussed in details. Besides the second-order harmonics, in-band IP3 and 1dB compression point in each band, cross-band nth-order intercept point IPn and cross-band 1dB compression point in concurrent LNA when multi-band works simultaneously are analyzed specifically. Then the cascode structure's nonlinearity is discussed and optimized.Finally, a concurrent four-band LNA based on TSMC 0.35μm RF CMOS process is obtained after debugging and simulating with the simulator SpectreRF in Cadence. The results show with a voltage-supply of 1.8V and a power consumption of 16.2mW, NF in all the four bands is less than 3.2dB, power gain is more than 10dB, s₁₁ and s₂₂ are less than -10dB, in-band and cross-band IIP3 are more than 0dBm, in-band and cross-band P_1dB are more than -15dBm and all the performance meet the requirement.