Open Quantum Point Microwave Analog Simulation Study

Nano-semiconductor quantum dot is the basic component of quantum devices. Realizing the property of quantum dot can offer reasonable interprets in theory and experiment for the principle of quantum devices'action. In open quantum dots, electrons can escape the dot by tunneling. Electron's transport and conductance of open dot are hot point in research fields. Understanding the dot's action in theory and experiment can also help people to catch on the essence of quantum devices activity in higher level. Based on the relations of analog and correlative experiments, used the simulation powerful ability of electromagnetic soft, this paper study the some characters of single open quantum dot and series tunneling double couple quantum dots by the means of computer simulation.Firstly, the relations of electrodynamics and quantum mechanics in detail are described in this paper. On the base of experiments, the analog model of open quantum dot is created in high frequency electromagnetic code: HFSS and the results can be computed by utilized the simulation ability of this code. By this way, the data of the model's dimension concretely are achieved and optimization of the model is finished, the feasibility of the means by contrasted the results of simulation and experiments are gained too.Secondly, the conductance of single open quantum dot is studied by analogous simulation. We analyze the wave functions on the tops or bottoms of conductance curve of the dot, further, and analyze effects the characters of dot connected to the external reservoirs by means of quantum-point-contact leads or 1 dimension quantum wire based on the relations of the analog.The following works which didn't report other man has done are studying the coupling degree and conductance in series tunneling double couple quantum dot by simulated. On the base of previous works, we create the model of the series tunneling double couple quantum dots firstly, and start the simulation works to study the property of this type of the dots which mentioned precede and gain the reasons affected coupling degree and the property of split peaks of conductance finally, also get some available data and suppositions for the study in succession.