Ic Defects Infrared Light-emitting Digital Lock-in Display Technology And Its Applications

Along with the development of semiconductor industry under the Moore's Law, IC becomes smaller and more and more multi-functional.As a result,the increase of cost restricts the development of the process.Under this circumstance,failure analysis has become one of the most important parts in the semiconductor industry chain.By the means of figuring out the failure mechanism effectively through FA,the serious defects may be avoided as soon as possible and then ensure the yield even using the new technology.The most important step of FA is failure localization because of the development of the semiconductor devices.Photo Emission Microscope(PEM) could find out the failure point quickly by taking advantage of the IR photo emission character of semiconductor material and structure.EMMI and OBIRCH are applied to observe the failed samples and they can deal with the major types of failure mechanism.The new technology called Digital Lock-in could dramatically improve the S/N ratio and bring the application of PEM to a new stage.The study starts from the micro-infrared radiation in semiconductor material and the defects.Then the principle of Digital Lock-in is discussed.The affect of parameter is studied to obtain the optimized picture.The performance of PEM with Digital Lock-in dealing with different types failure phenomenon was also studied.The application of PEM with Digital Lock-in to power MOSFET was emphasize on because power MOSFET was always a challenge to the traditional FA methods.Some useful information and case experience is put forward to help to make the PEM with Digital Lock-in more effective in the failure localization.