Fe-doped Zno Thin Films And Its Laser Induced Voltage Effect

Zinc Oxide (ZnO) is a II-VI semiconductor material with typical direct wide band-gap and hexagonal wurtzite structure. And it's band gap of 3.4eV at room temperature.The main reason of crystal have preferred orientation of axial C is that the surface (002) has the lowest free energy. Transparent conducting ZnO thin films have been recently gained much attention due to their good photoelectric behaviors such as transparent conducting films, surface acoustic wave devices, gas sensors and photoelectronic devices. And study as photoelectron information materials also. These thin films are prepared by Pulsed Laser Deposition and the growth conditions are optimized.Furthermore, Laser-Induced Voltage effect (LIV) is discovered on Zn1-xFexO thin films grown on vicinal-cut Al2O3 single crystal substrates for the first time, which dependence on different Fe doping level,Deposit timeand annealing oxygen pressure are investigated.Fe doped ZnO ceramics are prepared by solid state reaction method used as the targets for depositing thin films. These films, characterized with X-ray diffraction (XRD), shows wurzite structure.The epitaxial Zn1-xFexO thin films of wurzite structure are prepared by pulsed laser deposition (PLD) on Al2O3 single crystal substrates. The lattice parameters and crystalline quality of Zn1-xFexO thin films dependence on different Fe doping level,deposition oxygen pressure,annealing oxygen pressure and substrate temperature are investigated.A series of crystallization quality of Zn1-xFexO thin films with different Fe doping concentration are characterized and analysandanalysed by XRD.And the results proves that a good crystallization quality of all Zn1-xFexO thin films. With the concentration of doing Fe atoms increasing, the FWHM of the ZnO(002) diffraction peak reached the highest at the concentration of x=0.1at% and x=3at% for 0.25°and the lowest at the concentration of x=lat% and x=5at% for 0.17°,at this time the crystallization quality of Zn1-xFexO film is the best.The relationship between resistance and temperature of Zn1-xFexO thin films under different preparation process are measured by standard four-point probe method. the results shows that, the Zn1-xFexO thin films which are grown on the different Fe doping level,deposition oxygen pressure,annealing oxygen pressure and substrate temperature are semiconductor behavior.The preparation process under different measurement of laser induced voltage Zn1-xFexO film, and analyzes the signal of LIV Peak voltage Up and Response timeτ.The preparation technology for the highest signal of LIV Peak voltage in the Zn1-xFexO films are obtained, It is Provide a basis of application with device that high-sensitivity, fast response light and heat radiation detection.