Synthesis And Characteristics Research Of ZnO/Cu₂O Heterojunction Nanowire

In recent years in semiconductor materials, the research of nanometer ZnOsemiconductor materials has always been a hotspot, especially its application research.Because of One-dimensional well-aligned ZnO nanoarrays have excellent characteristics,therefore inspires people great interest and exploring, makes one-dimensional ZnOnano-material preparation have updated developmen. The synthesis methods ofOne-dimensional well-aligned ZnO nanoarrays are simple and diverse now. Meanwhile, italso have superior semiconductor and piezoelectric properties. At present, the research ofZnO heterojunction on nanometer scale cause scientists great attention. The studyprovide thebasis of experimental and theoretical for new optoelectronic devices'research in the future.Themaincontentofthispaperareasfollows:1,Using hydrothermal synthesis, with ammonia, reaction solution temperature settingfor 95℃, success in preparation ofone-dimensional nanometer ZnO nanoarrays on the Znchip, and their morphology and structure is analyzed. Experiments have found that reactionconcentration, reaction time and reaction temperature can controll factors such as diameterand length of one-dimensional nanometer ZnO nanoarray. At the same time, Explore itsgrowthmechanism,includingZnOnucleationandthegrowthofZnOnanowires.Thismethodcompared with other methods, reaction temperature is lower, convenient operation, nocatalyst. Nanometer ZnO array present aspects of launching, optical device has greatapplicationvalue.Itcanalsobeusedformassproductionpreparation.2,Byone-dimensional nanometer ZnOnanoarrays forunderlay,twokinds ofmethodspreparation ZnO-Cu₂O composite array. The as-prepared samples were characterized bytransmission electron microscopy (TEM), scanning electron microscopy (SEM), X-raydiffraction (XRD) and photoluminescence (PL) spectrum, respectively. We find nanoarraysurface become coarser, from 20-60nm diameter increased to 30-60nm. The top of ZnOnanowire arrays also covers growth nuclear of the Cu₂O. The I-V characters of the deviceshave been discussed. And the electron properties have been analyzed by compareing the I-Vcharacters of ZnO-Cu₂O composite array. Test results show that, with the increase of thevoltage, nano array diffraction peak and no apparent change, the lattice structure is relativelystable. The more it is worth noting, ZnO-Cu₂O nano-array showed high sensitivity, makes ithasgreatpotentialinphotoelectricdeviceapplications.